
Avalanche Technology offers P-SRAM Space Grade STT-MRAM
Space-grade parallel and serial STT-MRAM from 64Mb to 4Gb for military and space systems.
- Currently Offered

Space-grade parallel and serial STT-MRAM from 64Mb to 4Gb for military and space systems.
Avalanche P-SRAM Space Grade STT-MRAM is a third-generation perpendicular spin-transfer-torque MRAM family offered as parallel x32 asynchronous SRAM-compatible and serial QSPI OSPI devices for military and space applications. The series spans 64Mb, 256Mb, 1Gb and 4Gb densities with 45ns read and write timings or a 200MHz DDR serial interface, endurance beyond ten quadrillion write cycles and 10-year data retention at 125C.
The devices flow through PEMS-INST-001 screening for plastic encapsulated microcircuits in space, with Gen-3 test results showing no single-event latch-up and 175krad total-dose tolerance. Avalanche positions the family for high-performance space computing, payload processors and Space-IoT platforms where magnetic storage immunity to ionizing dose and single-event effects enables applications that flash memory cannot address.


Discrete non-volatile Toggle MRAM with SRAM-class read/write speed and effectively unlimited endurance for mission-critical systems.
Discrete non-volatile Toggle MRAM with SRAM-class read/write speed and effectively unlimited endurance for mission-critical systems.



Space-grade 1 to 8Gbit parallel-interface spin-transfer-torque MRAM with 45ns access and unlimited endurance for boot and execute memory.


Space-grade 2Gbit dual-QSPI spin-transfer-torque MRAM with unlimited endurance and 20-year retention for aerospace and defense systems.


Scalable spin-transfer-torque MRAM in DDR-compatible and xSPI serial variants for data-center, enterprise and industrial embedded use.


Branded persistent-MRAM portfolio combining Toggle and STT-MRAM devices for instant-on data capture and storage in harsh environments.


Unified STT-MRAM memory merging code storage and working data memory into one non-volatile device as a NOR-flash successor.


Ferroelectric RAM family to 16Mb with instant non-volatility, up to 108MHz QSPI and 100-trillion-cycle endurance for mission-critical data logging.
Space-grade 1 to 8Gbit parallel-interface spin-transfer-torque MRAM with 45ns access and unlimited endurance for boot and execute memory.

Space-grade 2Gbit dual-QSPI spin-transfer-torque MRAM with unlimited endurance and 20-year retention for aerospace and defense systems.

Scalable spin-transfer-torque MRAM in DDR-compatible and xSPI serial variants for data-center, enterprise and industrial embedded use.

Branded persistent-MRAM portfolio combining Toggle and STT-MRAM devices for instant-on data capture and storage in harsh environments.

Unified STT-MRAM memory merging code storage and working data memory into one non-volatile device as a NOR-flash successor.

Ferroelectric RAM family to 16Mb with instant non-volatility, up to 108MHz QSPI and 100-trillion-cycle endurance for mission-critical data logging.
