Cambridge GaN Devices

Cambridge GaN Devices' ICeGaN technology delivers high-efficiency, reliable gallium nitride semiconductors.

The CGD65A055S2 is a 650V / 55 mΩ GaN-on-silicon transistor with ICeGaN gate and current sense.

The CGD65A130S2 is a 650V / 130 mΩ GaN-on-silicon transistor with ICeGaN gate and current sense.

The CGD65B130S2 is a 650V / 130 mΩ GaN-on-silicon transistor with ICeGaN gate and current sense.

CGD Webinar Registration: Powering up The Future with GaN

Written by Prof. Florin Udrea – CTO, Cambridge GaN Devices

A personal view by Giorgia Longobardi, CEO, Cambridge GaN Devices

The company seeks employees passionate about power semiconductors and unconventional approaches to its green agenda.

The page highlights Cambridge GaN Devices' environmental, social, and governance efforts and links to a sustainability report.

Gallium Nitride Transistors and GaN Semiconductors deliver higher performance and increase energy savings. Discover Cambrige GaN Devices solutions.

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1. Who we are Cambridge GaN Devices Ltd ("CGD", "we", "us" or "our") is a company registered in England and Wales (company number 10430656). Our registered office is Jeffreys Building, Suite 8, Cowley Road, Cambridge, CB4 0DS.

This statement outlines Cambridge GaN Device's (CGD) efforts to identify and address potential risks of modern slavery and human trafficking within its business operations and supply chains.

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Cambridge GaN Devices launches a **650V gallium nitride (GaN) integrated circuit** targeting **electric vehicle inverters** to enhance powertrain efficiency. The component is specifically engineered for **automotive applications**, addressing energy conversion losses in EV systems. GaN technology enables higher switching speeds and reduced power consumption compared to traditional silicon-based solutions.

Jun 2026New ElectronicsNews article

A Cambridge University spin-out develops gallium nitride power devices. The company raises **$32 million in Series C funding**, led by a strategic investor and supported by British Patient Capital. The capital aims to accelerate global expansion in the power semiconductor sector.

Feb 2025Insider Media LtdNews article

CGD develops gallium nitride (GaN) devices that achieve up to 50% energy savings in high-power applications. The company has raised $32 million in funding to expand its global operations and scale production. GaN technology improves efficiency in power electronics, benefiting industries like electric vehicles and renewable energy systems.

Feb 2025Drives&Controls - The global site of the UK's leading magazine for automation, motion engineering and power transmissionNews article

Cambridge GaN Devices secures £25 million in Series C funding to expand its production of gallium nitride (GaN)-based power electronics. The company develops high-efficiency semiconductor devices for applications like electric vehicles and renewable energy systems. This funding will accelerate commercialization of its technology, targeting industries reliant on energy-efficient solutions.

Feb 2025BusinessCloudNews article