Infineon Technologies offers F-RAM (Ferroelectric RAM)
Product
Ferroelectric non-volatile memory portfolio from 4Kb to 16Mb with bus-speed writes and 100-trillion-cycle endurance for industrial and automotive data logging.
- Currently Offered
Ferroelectric non-volatile memory portfolio from 4Kb to 16Mb with bus-speed writes and 100-trillion-cycle endurance for industrial and automotive data logging.
Infineon F-RAM is a standalone ferroelectric non-volatile memory that captures and preserves critical data at bus speed with no write delay when power is interrupted. The portfolio spans 4Kb to 16Mb across I2C, SPI, QSPI and parallel interfaces with up to 100 trillion read/write cycles and ultra-low power consumption.
The memories target mission-critical data logging in industrial automation, automotive safety, medical, IoT, wearable, aerospace and defense applications. The EXCELON next generation extends the family to 108MHz QSPI, 2Mb to 16Mb densities and automotive-qualified variants.
Branded persistent-MRAM portfolio combining Toggle and STT-MRAM devices for instant-on data capture and storage in harsh environments.
Unified STT-MRAM memory merging code storage and working data memory into one non-volatile device as a NOR-flash successor.
Branded persistent-MRAM portfolio combining Toggle and STT-MRAM devices for instant-on data capture and storage in harsh environments.
Unified STT-MRAM memory merging code storage and working data memory into one non-volatile device as a NOR-flash successor.
Serial SRAM with hidden non-volatile backup, unlimited SRAM writes and capacitor-backed auto-store for power-loss-safe data logging.
Space-grade 2Gbit dual-QSPI spin-transfer-torque MRAM with unlimited endurance and 20-year retention for aerospace and defense systems.
Serial SRAM with hidden non-volatile backup, unlimited SRAM writes and capacitor-backed auto-store for power-loss-safe data logging.
Space-grade 2Gbit dual-QSPI spin-transfer-torque MRAM with unlimited endurance and 20-year retention for aerospace and defense systems.