NoMIS Power

State University of New York today announced that the Technology Accelerator Fund (TAF) invested $300,000 in faculty-led projects to accelerate the development of eight innovations that are poised for commercial success.

NoMIS Power introduced upcoming Silicon Carbide (SiC) power devices and modules at the IEEE Energy Conversion Congress and Expo in Nashville from October 29 to November 2, 2023, sharing performance data and discussing automotive and renewable energy applications.

NoMIS Power entered a lease agreement with NY CREATES and Fuller Road Management Corporation for private lab space in the CESTM building at the Albany Nanotech Complex to support rapid prototyping of SiC power devices.

NoMIS Power Group LLC was formed on May 4, 2020, by four founding members from SUNY Poly and Ohio State University, including professors and a postdoctoral research scientist.

NoMIS Power operates the https://www.nomispower.com/ website.

NoMIS Power demonstrates a **6.5 kV silicon carbide (SiC) MOSFET**, expanding its high-voltage capabilities. The company’s existing MOSFET lineup ranges from **3.3 kV (in production) to the newly demonstrated 6.5 kV**, while its roadmap targets **10 kV and 20 kV SiC IGBTs** for superior performance in ultra-high-voltage applications. NoMIS Power leverages its **rugged planar SiC device and packaging expertise** to develop these next-generation components.

Aug 2026nomispower.comNews article

NoMIS Power supplies **3.3 kV Silicon Carbide (SiC) MOSFETs** to a **$2.5 million ARPA-E DC-GRIDS consortium** led by Michigan State University. The project develops **high-voltage SiC-based Neutral Point Clamped Power Electronics Building Blocks (NPC-PEBBs)** as modular, plug-and-play submodules for **multiport multiterminal HVDC (MT-HVDC) converters**. These components aim to enable vendor-agnostic integration in next-generation power grid infrastructure.

May 2026nomispower.comNews article

NoMIS Power introduces two new medium-voltage Silicon Carbide (SiC) MOSFETs: the **N3PT035MP330K** (3.3 kV, 35 mΩ, 88 A) and the **N3PT100MP170K** (1.7 kV, 100 mΩ, 24 A). Both devices are available in TO-247-4L packaging or as bare die, targeting high-efficiency power conversion applications. The company continues to expand its SiC MOSFET lineup for industrial and electric vehicle systems.

Feb 2026nomispower.comNews article

NoMIS Power Corporation introduces its first **3.3 kV SiC MOSFET**, the **NoMIS N3PT080MP330**, a planar device targeting medium-voltage power electronics. The MOSFET achieves **80 mΩ on-resistance (34 A)** and delivers industry-leading efficiency metrics, expanding the company’s SiC technology into higher-voltage applications. The lineup aims to enhance performance and reliability for next-generation power conversion systems.

Sep 2025nomispower.comNews article