The vertical GaN transistor architecture pushes energy conversion closer to the silicon with less power loss and heat than conventional approaches, which the company reports can improve efficiency by up to 30 percent.

It also enables a roughly 50 percent smaller power footprint in AI data center racks while being manufactured on 8-inch wafers with standard silicon CMOS methods, supporting scalability through existing semiconductor production lines.

Demand for vertical gallium nitride power devices is driven by rising AI workload power density in data centers, where power delivery has become a critical bottleneck for compute scaling.

Grid and renewable energy infrastructure adds further demand for higher-voltage direct-current power architectures that seek greater efficiency and smaller power-conversion footprints.

Vertical Semiconductor develops a vertical gallium nitride power transistor platform for high-voltage conversion in data centers and grid infrastructure. Its current site describes a device architecture scaling from about 40 volts to more than 2 kilovolts and invites customers to request early access.

The company has demonstrated the technology on eight-inch wafers using silicon CMOS manufacturing methods. Its October 2025 launch said first packaged prototypes would enter early sampling and a more integrated solution was targeted for 2026.