Vertical Semiconductor›Vertical Semiconductor› offers Vertical GaN Power Transistors

Vertical GaN Power Transistors are the company's vertical gallium nitride power transistor platform, demonstrated on 8-inch wafers using standard silicon CMOS manufacturing methods. The devices target 100-volt to 1.2-kilovolt applications for high-voltage direct-current power architectures.

They are designed for power conversion in AI data centers and grid infrastructure, where the company aims for higher power density, reduced energy loss and heat, and a smaller power footprint. First prototype packaged devices are planned for early sampling, with a fully integrated solution targeted for 2026.