
ASML offers Laser-Produced Plasma EUV Source
ASML’s laser-produced plasma source generates EUV light for advanced semiconductor lithography.
- Currently Offered

ASML’s laser-produced plasma source generates EUV light for advanced semiconductor lithography.
ASML’s laser-produced plasma source generates 13.5 nm extreme ultraviolet light inside its lithography systems. A generator ejects molten tin droplets, and two laser pulses flatten and vaporize each droplet into a light-emitting plasma. ASML says this process repeats 50,000 times per second to supply light for chip production.
The source is a component integrated into ASML’s NXE and EXE scanners, rather than a complete wafer-patterning machine. Its technology descends from Cymer’s laser-produced plasma sources, which ASML adopted before acquiring Cymer in 2013. Cymer records delivery of a production-ready source in 2009; that date describes the source lineage rather than the launch of a current ASML revision.


xLight's planned EUV Light Source System uses free-electron lasers for semiconductor lithography.
xLight's planned EUV Light Source System uses free-electron lasers for semiconductor lithography.



Gigaphoton develops compact laser-produced-plasma EUV light sources for semiconductor mask inspection.


TAU's lithography light source uses compact particle accelerators to drive X-ray lasers.


STARLIGHT is Inversion Semiconductor’s planned tunable soft X-ray source for lithography development and related applications.
Gigaphoton develops compact laser-produced-plasma EUV light sources for semiconductor mask inspection.

TAU's lithography light source uses compact particle accelerators to drive X-ray lasers.

STARLIGHT is Inversion Semiconductor’s planned tunable soft X-ray source for lithography development and related applications.
